Zero-bias GaAsSb/InAlAs/InGaAs tunnel diode detectors for 220–330 GHz range

Author

Patrashin, Mikhail ; Sekine, Norihiko ; Kasamatsu, Akifumi ; Watanabe, Issei ; Hosako, Iwao ; Takahashi, Tatsuro ; Sato, Mitsuhisa ; Nakasha, Yasuhiro ; Hara, Naoya

Author_Institution

Nat. Inst. of Inf. & Commun. Technol., Koganei, Japan

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

This presentation describes on-wafer characterization of GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection in 220-330GHz band. Voltage sensitivity above 1000V/W was measured in 0.8μm×0.8μm mesa device at room temperature. The detectors demonstrated enhanced temperature stability of the characteristics compared to zero-bias Schottky barrier diodes. The estimated variations of the zero-bias sensitivity at temperatures from 17K to 300K were less than 2dB.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; millimetre wave detectors; semiconductor heterojunctions; terahertz wave detectors; tunnel diodes; GaAsSb-InAlAs-InGaAs; frequency 220 GHz to 330 GHz; mesa device; on-wafer characterization; size 0.8 mum; temperature 17 K to 300 K; temperature stability enhancement; tunnel diode detector; voltage sensitivity; zero bias sensitivity; Detectors; Indium compounds; Schottky diodes; Sensitivity; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880529

Filename

6880529