DocumentCode :
1785741
Title :
W-band InP-based resonant tunnelling diode oscillator with milliwatt output power
Author :
Jue Wang ; Liquan Wang ; Chong Li ; Alharbi, Khalid ; Khalid, Amir ; Wasige, Edward
Author_Institution :
High Freq. Electron. Group, Univ. of Glasgow, Glasgow, UK
fYear :
2014
fDate :
11-15 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
This paper presents a high power (milliwatt) W-band resonant tunneling diode (RTD) oscillator. The oscillator circuit employs two RTD devices in parallel and operates at 75.2 GHz with -0.2 dBm (0.95 mW) output power. To the authors knowledge, this is the highest reported output power for an RTD oscillator at W-band.
Keywords :
millimetre wave diodes; millimetre wave oscillators; resonant tunnelling diodes; InP; RTD devices; RTD oscillator; frequency 75.2 GHz; high power W-band-based resonant tunnelling diode oscillator; milliwatt output power; power 0.95 mW; Current measurement; Educational institutions; MMICs; Oscillators; Power generation; Resonant frequency; Resonant tunneling devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
Type :
conf
DOI :
10.1109/ICIPRM.2014.6880531
Filename :
6880531
Link To Document :
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