Title :
Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs
Author :
Meunier, B. ; Louahadj, L. ; Le Bourdais, David ; Largeau, Ludovic ; Agnus, G. ; Mazet, L. ; Bachelet, R. ; Regreny, P. ; Albertini, D. ; Pillard, V. ; Dubourdieu, C. ; Gautier, B. ; Lecoeur, Philippe ; Saint-Girons, G.
Author_Institution :
Ecole Centrale de Lyon, Univ. de Lyon, Ecully, France
Abstract :
Ferroelectric epitaxial Pb(Zr, Ti)O3(PZT) layers were grown by pulsed laser deposition on SrTiO3/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO3/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.
Keywords :
X-ray diffraction; epitaxial layers; ferroelectric thin films; gallium arsenide; lead compounds; molecular beam epitaxial growth; pulsed laser deposition; strontium compounds; PZT layers; Pb(ZrTi)O3; X-ray diffraction; ferroelectric epitaxial layers; ferroelectric thin layer; molecular beam epitaxy; piezoresponse force microscopy; pulsed laser deposition; relative dielectric permittivity; structural quality; Electrodes; Gallium arsenide; Molecular beam epitaxial growth; Pulsed laser deposition; Semiconductor device measurement; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880535
