Improved electron-beam lithography with C60 fullerene for InP membrane waveguides

Author

Yuqing Jiao ; Pello, Josselin ; Longfei Shen ; Smalbrugge, B. ; Smit, Meint ; van der Tol, Jos

Author_Institution

COBRA Res. Inst., Eindhoven Univ. of Technol., Eindhoven, Netherlands

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

We present a method to prepare a mixed resist material composed of a positive electron-beam resist (ZEP520A) and C₆₀ fullerene. The method is modified from previous methods in literatures to achieve an optimized mixing. An improvement of the mixed material on the thermal resistance respect to the same structures fabricated with normal ZEP resist has been demonstrated by fabricating multimode interference couplers and coupling regions of micro-ring resonators. An improvement on the propagation loss of the InP membrane waveguides from 6.6 to 3.3 dB/cm using this mixed material is also shown.

Keywords

III-V semiconductors; electron beam lithography; fullerenes; indium compounds; micro-optics; optical couplers; optical fabrication; optical losses; optical materials; optical resonators; optical waveguides; photoresists; thermal resistance; C; C₆₀ fullerene; InP; InP membrane waveguides; ZEP520A; electron-beam lithography; microring resonator coupling regions; mixed resist material; multimode interference coupler fabrication; normal ZEP resist; optimized mixing; positive electron-beam resist; propagation loss; thermal resistance; Couplings; Indium phosphide; Loss measurement; Optical waveguides; Propagation losses; Resists;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880546

Filename

6880546