High quality quantum-well intermixing for InP-based membrane photonic integration on Si

Author

Jieun Lee ; Doi, Kohei ; Hiratani, Takuo ; Inoue, Daisuke ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Denartment of Electr. & Electron. Enzineerina, J. Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

To realize membrane photonic integrated circuits, a novel quantum-well-intermixing (QWI) process using dual SiO₂ films (O₂-sputtered layer for enhancement of QWI and plasma-deposited layer for surface protection) was investigated. By optimization of the protection layer thickness, a large bandgap wavelength shift difference of 95 nm (57 meV) as well as good photoluminescence (PL) properties (no degradations in the PL spectral width and the intensity) was obtained. Moreover, the transient region length was estimated to be less than 3 μm which is the resolution limit of our PL measurement setup.

Keywords

elemental semiconductors; energy gap; integrated optics; membranes; photoluminescence; semiconductor quantum wells; silicon; silicon compounds; InP; InP-based membrane photonic integration; Si-SiO₂; bandgap wavelength shift difference; dual silica films; high quality quantum-well intermixing; membrane photonic integrated circuits; photoluminescence measurement setup; protection layer thickness optimization; resolution limit; transient region length; Indium phosphide; Optical waveguides; Photonic band gap; Photonics; Transient analysis; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880550

Filename

6880550