Low power on-off mode RTD-based oscillator integrated with an HBT switch

Author

Jaehong Park ; Kiwon Lee ; Jooseok Lee ; Kyounghoon Yang

Author_Institution

Dept. of Electr. Enginnering, Korea Adv. Inst. of Sci. & Technol.(KAIST), Daejeon, South Korea

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

A low power on-off mode resonant tunneling diode (RTD) based oscillator is demonstrated by using an RTD/heterojunction bipolar transistor (HBT) MMIC technology. Using the negative differential resistance (NDR) characteristics of the tunneling diode, which arise at a low applied voltage range from the quantum-effect, the low power oscillators are used for microwave on-off keying (OOK) signal modulation. The fabricated RTD-based oscillator shows low power consumption of 5 mW at an oscillation frequency of 5.2 GHz. The RTD-based oscillator operates in an on-off mode with a high data rate of 1 Gb/s from the fast switching capabilities of the RTD and HBT switch. A good energy efficiency of 5 pJ/bit has been obtained in this work.

Keywords

MMIC oscillators; amplitude shift keying; heterojunction bipolar transistors; low-power electronics; resonant tunnelling diodes; HBT switch; MMIC technology; bit rate 1 Gbit/s; frequency 5.2 GHz; heterojunction bipolar transistor; low power on-off mode RTD based oscillator; microwave on-off keying signal modulation; negative differential resistance; power 5 mW; quantum effect; resonant tunneling diode; Energy efficiency; Heterojunction bipolar transistors; Oscillators; Power demand; Resonant tunneling devices; Switches; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880552

Filename

6880552