Title :
Gain characteristics and femto-second optical pulse response of 1550nm-band QD-SOA for ultra-fast all-optical logic gate devices
Author :
Matsumoto, Akiyoshi ; Takei, Y. ; Matsushita, Akira ; Akahane, Kouichi ; Matsushima, Y. ; Utaka, K.
Author_Institution :
Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan
Abstract :
We fabricated the QD-SOA, which was composed of 20-layer-stacked InAs quantum dots structure with the strain-compensation technique grown by MBE, and evaluated the fundamental gain characteristics and ultra-fast optical pulse response for all-optical logic gate devices at a wavelength range around 1550nm. For the device length of 1650 μm, the maximum gain of 34.7 dB was obtained for TE mode. And we also measured femto-second optical pulse response by auto-correlation waveforms to observe a slight pulse broadening of about 55 fs.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; optical logic; quantum dot lasers; semiconductor optical amplifiers; 20-layer-stacked InAs quantum dot structure; InAs; MBE; QD-SOA; TE mode; autocorrelation waveforms; device length; femtosecond optical pulse response; fundamental gain characteristics; gain 34.7 dB; maximum gain; size 1650 mum; slight pulse broadening; strain-compensation technique; time 55 fs; ultrafast all-optical logic gate devices; ultrafast optical pulse response; wavelength 1550 nm; Gain; Logic gates; Optical device fabrication; Optical pulses; Optical reflection; Optical waveguides; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880561
