Title :
High transconductance, ft and fmax in In0.63Ga0.37As FinFETs using a novel fin formation technique
Author :
Zota, Cezar B. ; Wernersson, Lars-Erik ; Lind, Erik
Author_Institution :
Dept. of Electr. Eng., Lund Univ., Lund, Sweden
Abstract :
We report on In0.63Ga0.37As FinFETs utilizing nanowires grown by selective-area growth as channel. These nanowires are defined by crystallographic planes rather than pattern transfer using etching. The fabricated devices exhibit maximum transconductance gm, max = 2.05 mS/um at Vds = 0.5 V, as well as record-high extrapolated ft = 300 GHz and fmax = 342 GHz, on the non-planar III-V MOSFET platform.
Keywords :
III-V semiconductors; MOSFET; etching; gallium arsenide; indium compounds; nanowires; submillimetre wave transistors; FinFET; In0.63Ga0.37As; crystallographic planes; fin formation technique; frequency 300 GHz; frequency 342 GHz; pattern transfer; selective area growth; voltage 0.5 V; Etching; FinFETs; Indium phosphide; Logic gates; Nanowires; Performance evaluation;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880567
