Title :
InGaAs MOSFET source structures toward high speed/low power applications
Author :
Miyamoto, Yutaka ; Kanazawa, Toru ; Yonai, Yoshiharu ; Kato, Akira ; Fujimatsu, Motohiko ; Kashiwano, Masashi ; Ohsawa, Kazuto ; Ohashi, Kazumi
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
High on-currents (Ion) and low off-currents (Ioff) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and ID = 2.4 mA/μm at VD = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low Ioff. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high Ion and low Ioff realization.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; low-power electronics; tunnel transistors; GaAsSb-InGaAs; InP; MOSFET source structures; SS dependence; high on-currents; high speed-low power applications; low off-currents; low supply voltage; narrow channel body; size 26 nm; steep sub-threshold dependence; super-lattice source; vertical tunnel FET; voltage 0.5 V; Aluminum oxide; Current density; Indium gallium arsenide; Indium phosphide; MOSFET;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880570
