InGaAs MOSFET source structures toward high speed/low power applications

Author

Miyamoto, Yutaka ; Kanazawa, Toru ; Yonai, Yoshiharu ; Kato, Akira ; Fujimatsu, Motohiko ; Kashiwano, Masashi ; Ohsawa, Kazuto ; Ohashi, Kazumi

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

High on-currents (Ion) and low off-currents (I_off) under low supply voltage are important for logic applications. A heavily doped InP source was introduced to demonstrate the existence of high Ion in InGaAs MOSFETs, and I_D = 2.4 mA/μm at V_D = 0.5 V was observed. GaAsSb source was introduced in InGaAs tunnel FET to realize low I_off. Narrow channel body was found to be essential for steep sub-threshold (SS) dependence, and a fabricated GaAsSb/InGaAs vertical tunnel FET with a 26 nm wide body showed steep SS. In addition, an InGaAs/InP super-lattice source was studied to consider the possibility of simultaneous high I_on and low I_off realization.

Keywords

III-V semiconductors; MOSFET; gallium arsenide; indium compounds; low-power electronics; tunnel transistors; GaAsSb-InGaAs; InP; MOSFET source structures; SS dependence; high on-currents; high speed-low power applications; low off-currents; low supply voltage; narrow channel body; size 26 nm; steep sub-threshold dependence; super-lattice source; vertical tunnel FET; voltage 0.5 V; Aluminum oxide; Current density; Indium gallium arsenide; Indium phosphide; MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880570

Filename

6880570