Title :
Vertical illumination InAlAs avalanche photodiode for 50-Gbit/s applications
Author :
Nada, Masahiro ; Muramoto, Yoshifumi ; Yokoyama, Haruki ; Ishibashi, Takayuki ; Matsuzaki, Hideaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
We achieved a high-performance InAlAs avalanche photodiode (APD) for beyond 25-Gbit/s applications, such as 50-Gbit/s. The large optical tolerance of the APD´s vertical-illumination structure makes optical coupling easy compared with waveguide-type structures. The fabricated APD exhibits responsivity of 0.69 A/W with a large 3-dB bandwidth of 30 GHz at a multiplication factor (M) of 4.6, which enables 50-Gbit/s highly sensitive operation.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; optical communication equipment; optical couplers; optical waveguides; APD vertical-illumination structure; InAlAs; bandwidth 30 GHz; bit rate 50 Gbit/s; high-performance InAlAs avalanche photodiode; multiplication factor; optical coupling; optical tolerance; vertical illumination InAlAs avalanche photodiode; waveguide-type structures; Absorption; Avalanche photodiodes; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical waveguides;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880573
