Title :
Butt-joint integration of active optical components based on InP/AlInGaAsP alloys
Author :
Kulkova, Irina V. ; Kuznetsova, Nadezda ; Semenova, Elizaveta ; Yvind, Kresten
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; indium compounds; integrated optics; photoluminescence; quantum well lasers; semiconductor optical amplifiers; μPL measurements; BJ interface; EAM; InP-AlInGaAsP; InP/AlInGaAsP alloys; MQW Electro-Absorption Modulator; QW Semiconductor Optical Amplifier; SOA; active optical components; all-active planar high quality butt-joint integration; optical properties; Indium gallium arsenide; Indium phosphide; Laser mode locking; Optical reflection; Quantum well devices; Semiconductor optical amplifiers;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
DOI :
10.1109/ICIPRM.2014.6880579
