Ion implanted In0.53Ga0.47As for ultrafast saturable absorber device at 1.55 μm

Author

Li Fang ; Bachelet, Cyril ; Sagnes, I. ; Beaudoin, G. ; Oudar, Jean-Louis

Author_Institution

Lab. de Photonique et de Nanostruct., Marcoussis, France

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Iron (Fe) ion implantation with post-annealing was used to shorten the carrier lifetime of In_0.53Ga_0.47As-based saturable absorber due to an effective Fe³⁺/Fe²⁺ trap level. The modulation depth and the nonsaturable loss were investigated. Moreover, we found that the saturation of Fe-related trap level at high excited carrier density can be avoided by introducing Zn dopant in InGaAs. Furthermore, by comparing As and Fe-implanted InGaAs samples, we found that Fe²⁺/Fe³⁺ is more effective as a trap center for electrons and holes, while ionized As is a trap center only for electrons in InGaAs.

Keywords

III-V semiconductors; annealing; carrier lifetime; electron density; gallium arsenide; high-speed optical techniques; indium compounds; ion implantation; iron; optical losses; optical modulation; optical saturable absorption; radiation pressure; zinc; In_0.53Ga_0.47As; Zn; carrier lifetime; electron trap center; high-excited carrier density; hole trap center; iron ion implantation; modulation depth; nonsaturable loss; post-annealing; ultrafast saturable absorber device; wavelength 1.55 mum; zinc dopant; Annealing; Charge carrier lifetime; Indium gallium arsenide; Indium phosphide; Iron; Modulation; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880581

Filename

6880581