DocumentCode :
1785838
Title :
Membrane hybrid optical devices and related technologies toward on-Si photonic integrated circuits
Author :
Nishiyama, Naoto ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear :
2014
fDate :
11-15 May 2014
Firstpage :
1
Lastpage :
2
Abstract :
Toward realization of on-chip photonic integrated circuits on LSI for high performance computing, membrane III-V optical devices on Si using BCB bonding have been proposed. Strong optical confinement due to high index contrast between the core and cladding layers gives low threshold and high efficiency operation of lasers. Using a lateral current injection structure, RT-CW operation was demonstrated. The structure could be applied for other optical devices such as waveguide-type photodetectors and wire waveguides.
Keywords :
III-V semiconductors; integrated optics; refractive index; semiconductor lasers; silicon; BCB bonding; RT-CW operation; Si; high performance computing; high-index contrast; hybrid lasers; lateral current injection structure; membrane III-V optical devices; on-chip photonic integrated circuits; on-silicon photonic integrated circuits; optical confinement; waveguide-type photodetectors; wire waveguides; Optical devices; Optical waveguides; Photodetectors; Semiconductor lasers; Silicon; Substrates; Waveguide lasers; Si-photonics; hybrid lasers; membrane PIC;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 26th International Conference on
Conference_Location :
Montpellier
Type :
conf
DOI :
10.1109/ICIPRM.2014.6880582
Filename :
6880582
Link To Document :
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