Low-threshold-current operation of lateral current injection membrane distributed-feedback laser bonded on Si

Author

Atsuji, Yuki ; Doi, Kohei ; Lee, Jeyull ; Atsumi, Yuki ; Hiratani, Takuo ; Inoue, Daisuke ; Amemiya, Tomohiro ; Nishiyama, Naoto ; Arai, Shigehisa

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

11-15 May 2014

Firstpage

1

Lastpage

2

Abstract

Toward realization of an ultralow-power-consumption semiconductor light source for on-chip optical interconnection, we have been investigating the lateral current injection (LCI) membrane distributed feedback (DFB) laser. This time, we realized membrane DFB laser with 158 nm core thickness and demonstrated room-temperature continuous-wave (CW) operation with a threshold current of 390 μA for the cavity length of 360 μm and the stripe width of 0.2 μm, which is lowest value ever reported in a DFB lasers on a Si substrate.

Keywords

distributed feedback lasers; laser beams; laser cavity resonators; light sources; optical interconnections; semiconductor lasers; silicon; Si; Si substrate; cavity length; core thickness; current 390 muA; lateral current injection membrane distributed-feedback laser; low-threshold-current operation; membrane DFB laser; on-chip optical interconnection; room-temperature continuous-wave operation; size 0.2 mum; size 158 nm; size 360 mum; stripe width; temperature 293 K to 298 K; threshold current; ultralow-power-consumption semiconductor light source; Cavity resonators; Distributed feedback devices; Indium phosphide; Substrates; Surface emitting lasers; Threshold current; DFB laser; EB lithography; lateral current injection; membrane laser; optical interconnects; strong optical confinement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 26th International Conference on

Conference_Location

Montpellier

Type

conf

DOI

10.1109/ICIPRM.2014.6880584

Filename

6880584