• DocumentCode
    1786157
  • Title

    Characterization and modeling of resistive-transition phenomena and electronic structure of sputter-deposition SiO2 films

  • Author

    Yamaguchi, Ryo ; Sato, Seiki ; Omura, Y. ; Nakamura, Kentaro

  • Author_Institution
    Grad. Sch. Sci. & Eng., Kansai Univ., Suita, Japan
  • fYear
    2014
  • fDate
    7-9 July 2014
  • Firstpage
    69
  • Lastpage
    72
  • Abstract
    This paper investigates the electronic structures of sputter-deposition SiO2 films in low-resistance state and high-resistance state at room temperature and low temperature. The electronic structure of post-resistive transition is also characterized spectroscopically by means of the current fluctuation.
  • Keywords
    electrical resistivity; electronic structure; insulating thin films; silicon compounds; spectrochemical analysis; sputter deposition; SiO2; current fluctuation; electronic structure; high-resistance state; low-resistance state; post-resistive transition; resistive transition phenomena; spectroscopic characterisation; sputter deposition SiO2 films; temperature 293 K to 298 K; Charge carrier processes; Electrodes; Films; Fluctuations; Leakage currents; Resistance; Temperature; Resistive transition; SiO2 film; current fluctuation; electronic structure; low temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Temperature Electronics (WOLTE), 2014 11th International Workshop on
  • Conference_Location
    Grenoble
  • Type

    conf

  • DOI
    10.1109/WOLTE.2014.6881028
  • Filename
    6881028
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1786157