DocumentCode :
1786157
Title :
Characterization and modeling of resistive-transition phenomena and electronic structure of sputter-deposition SiO2 films
Author :
Yamaguchi, Ryo ; Sato, Seiki ; Omura, Y. ; Nakamura, Kentaro
Author_Institution :
Grad. Sch. Sci. & Eng., Kansai Univ., Suita, Japan
fYear :
2014
fDate :
7-9 July 2014
Firstpage :
69
Lastpage :
72
Abstract :
This paper investigates the electronic structures of sputter-deposition SiO2 films in low-resistance state and high-resistance state at room temperature and low temperature. The electronic structure of post-resistive transition is also characterized spectroscopically by means of the current fluctuation.
Keywords :
electrical resistivity; electronic structure; insulating thin films; silicon compounds; spectrochemical analysis; sputter deposition; SiO2; current fluctuation; electronic structure; high-resistance state; low-resistance state; post-resistive transition; resistive transition phenomena; spectroscopic characterisation; sputter deposition SiO2 films; temperature 293 K to 298 K; Charge carrier processes; Electrodes; Films; Fluctuations; Leakage currents; Resistance; Temperature; Resistive transition; SiO2 film; current fluctuation; electronic structure; low temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Electronics (WOLTE), 2014 11th International Workshop on
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/WOLTE.2014.6881028
Filename :
6881028
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1786157
بازگشت