Title :
Low-temperature characterization of hall and effective mobility in junctionless transistors
Author :
Min-Kyu Joo ; Mouis, M. ; Piot, Benjamin ; Barraud, S. ; Minju Shin ; Gyu-Tae Kim ; Ghibaudo, Gerard
Author_Institution :
Minatec, IMEP-LAHC, Grenoble INP, Grenoble, France
Abstract :
The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μEff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (Ns) and corresponding Hall mobility (μHall) Hall Effect measurements were carried out and compared to μEff.
Keywords :
Hall mobility; carrier density; cryogenic electronics; field effect transistors; semiconductor device models; CV; Hall effect measurements; Hall mobility characteristics; JLTs; VFB; charge based analytical model; effective mobility characteristics; flat-band position; low-temperature characterization; n-type junctionless transistors; split capacitance-to-voltage; surface carrier density; temperature 100 K; Analytical models; Charge carrier density; Hall effect; Logic gates; Silicon; Transistors; Voltage measurement; Flat-band voltage; Hall Effect measurement; Junctionless transistor; Mobility; Split CV measurement;
Conference_Titel :
Low Temperature Electronics (WOLTE), 2014 11th International Workshop on
Conference_Location :
Grenoble
DOI :
10.1109/WOLTE.2014.6881032
