Low-temperature characterization of hall and effective mobility in junctionless transistors

Author

Min-Kyu Joo ; Mouis, M. ; Piot, Benjamin ; Barraud, S. ; Minju Shin ; Gyu-Tae Kim ; Ghibaudo, Gerard

Author_Institution

Minatec, IMEP-LAHC, Grenoble INP, Grenoble, France

fYear

2014

fDate

7-9 July 2014

Firstpage

85

Lastpage

88

Abstract

The Hall and effective mobility characteristics of n-type junctionless transistors (JLTs) at low temperature (T=100K) are reported here for the first time. To this end, the effective mobility values (μ_Eff) were extracted from the charge based analytical model of JLT with account for flat-band (VFB) position and split capacitance-to-voltage (CV), respectively. Besides, in order to directly determine the surface carrier density (N_s) and corresponding Hall mobility (μ_Hall) Hall Effect measurements were carried out and compared to μ_Eff.

Keywords

Hall mobility; carrier density; cryogenic electronics; field effect transistors; semiconductor device models; CV; Hall effect measurements; Hall mobility characteristics; JLTs; VFB; charge based analytical model; effective mobility characteristics; flat-band position; low-temperature characterization; n-type junctionless transistors; split capacitance-to-voltage; surface carrier density; temperature 100 K; Analytical models; Charge carrier density; Hall effect; Logic gates; Silicon; Transistors; Voltage measurement; Flat-band voltage; Hall Effect measurement; Junctionless transistor; Mobility; Split CV measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Temperature Electronics (WOLTE), 2014 11th International Workshop on

Conference_Location

Grenoble

Type

conf

DOI

10.1109/WOLTE.2014.6881032

Filename

6881032