Low temperature characterization of CVD graphene devices fabricated with a scalable process route

This paper deals with the low temperature characterization of graphene devices fabricated on CVD graphene via a scalable route. Longitudinal resistivity and Hall resistance of Hall bar structures were measured at 4 K and 20 K while sweeping magnetic fields up to 11 T. Features in the magnetic field dependence of longitudinal resistivity were interpreted in terms of weak localization and Landau level position. We extracted carrier density and mobility values for our devices, and interpreted the behavior of resistivity against magnetic field and temperature. Furthermore, we discussed the impacts of synthesis and fabrication on the mobility of graphene. Finally, we were able to gain information on the underlying scattering by analyzing the magnetic field and temperature dependences of the longitudinal resistance.