X-parameters: The new tendency in the characterization of nonlinear RF devices

Author

Urbina-Martinez, J.L. ; Malagon-Reyes, U. ; Loo-Yao, J.R. ; Moreno, Pablo ; Reynoso-Hernandez, J.A.

Author_Institution

Centro de Investig. y de Estudios Av. del I. P. N. Unidad Guadalajara (CINVESTAV-GDL), Zapopan, Mexico

fYear

2014

fDate

12-14 Nov. 2014

Firstpage

1

Lastpage

7

Abstract

The X parameters allow characterize, analyze and model nonlinear devices and systems under a wide range of frequencies from 10 MHz to 50 GHz. These parameter are the evolution of the small signal S parameters, since it can work both in the linear region as in the nonlinear region of the device under test (DUT). Its application is centered in the field of power amplifiers, because they describe with great accuracy of nonlinear intrinsic behavior of any active DUT without an electrical equivalent circuit. This paper analyzes clearly the theory of X parameters, by means of a design example of a RF amplifier at 5 GHz with a power gain of 10 dB using S and X parameters.

Keywords

radio equipment; radiofrequency power amplifiers; DUT; X-parameters; device under test; electrical equivalent circuit; linear region; nonlinear RF devices; nonlinear devices; nonlinear intrinsic behavior; nonlinear region; power amplifiers; Analytical models; Electronic mail; Gallium arsenide; Radio frequency; Scattering parameters; Silicon compounds; Transistors; Harmonic Balance; Nonlinear Modeling; RF Amplifier; X-Parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Central America and Panama Convention (CONCAPAN XXXIV), 2014 IEEE

Conference_Location

Panama City

Type

conf

DOI

10.1109/CONCAPAN.2014.7000418

Filename

7000418