DocumentCode
1786760
Title
Leveraging data lifetime for energy-aware last level non-volatile SRAM caches using redundant store elimination
Author
Hsiang-Jen Tsai ; Chien-Chih Chen ; Keng-Hao Yang ; Ting-Chin Yang ; Li-Yue Huang ; Ching-Hao Chung ; Meng-Fan Chang ; Tien-Fu Chen
Author_Institution
Dept. of CS, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2014
fDate
1-5 June 2014
Firstpage
1
Lastpage
6
Abstract
NVM has commonly been used to address increasingly large last-level caches (LLCs) requirements by reducing leakage. However, frequent data-writing operations result in increased energy consumption. In this context, a promising memory technology, Non-volatile SRAM (nvSRAM), enables normal and standby operation modes which can be used to store various types of data. However, nvSRAM suffers from high dynamic energy usage due to frequent switching between operation modes. In this paper, we propose a redundant store elimination (RSE) scheme which, on average, discards 94% of needless bit-write operations. Moreover, we present a retention-aware cache management policy to reduce data updates of cache blocks, based on the correlation between data lifetime and cache types. Experimental results demonstrate that our proposal can improve energy consumption of SRAM-based and RRAM-based LLCs by 57% and 31%, respectively.
Keywords
SRAM chips; cache storage; logic design; NVM; RRAM-based LLC; SRAM-based LLC; bit-write operations; cache blocks; cache types; data lifetime; data updates; data-writing operations; energy consumption; energy-aware last level nonvolatile SRAM caches; high dynamic energy usage; last-level caches requirements; memory technology; nvSRAM; redundant store elimination; retention-aware cache management policy; standby operation modes; Energy consumption; Memory management; Microprocessors; Nonvolatile memory; Radiation detectors; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (DAC), 2014 51st ACM/EDAC/IEEE
Conference_Location
San Francisco, CA
Type
conf
DOI
10.1145/2593069.2593153
Filename
6881365
Link To Document