• DocumentCode
    1787008
  • Title

    Secure memristor-based main memory

  • Author

    Kannan, S. ; Karimi, N. ; Sinanoglu, Ozgur

  • Author_Institution
    Polytech. Sch. of Eng., Dept. of Electr. & Comput. Eng., NYU, New York, NY, USA
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Non-volatile memory devices such as phase change memories and memristors are promising alternatives to SRAM and DRAM main memories as they provide higher density and improved energy efficiency. However, non-volatile main memories (NVMM) introduce security vulnerabilities. Sensitive data such as passwords and keys residing in the NVMM will persist and can be probed after power down. We propose sneak-path encryption (SPE), for memristor-based NVMM. SPE exploits the physical parameters, multi-level cell (MLC) capability and the sneak paths in cross-bar memories to encrypt the data stored in memristor-based NVMM. We investigate three attacks on NVMMs and show the resilience of SPE against them. We use a cycle accurate simulator to evaluate the security and performance impact of SPE based NVMM. SPE can secure the NVMM with a latency of 16 cycles and ~1.5% performance overhead.
  • Keywords
    DRAM chips; SRAM chips; cryptography; memristors; phase change memories; DRAM main memories; MLC; SPE; SRAM main memories; cross-bar memories; memristor-based NVMM; memristor-based main memory; multilevel cell; nonvolatile main memories; nonvolatile memory devices; phase change memories; sneak-path encryption; Ciphers; Encryption; Memristors; Nonvolatile memory; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2014 51st ACM/EDAC/IEEE
  • Conference_Location
    San Francisco, CA
  • Type

    conf

  • Filename
    6881505