A systematic approach for analyzing and optimizing cell-internal signal electromigration

Electromigration (EM) in on-chip metal interconnects is a critical reliability failure mechanism in nanometer-scale technologies. This work addresses the problem of EM on signal interconnects within a standard cell. An approach for modeling and efficient characterization of cell-internal EM is developed, incorporating Joule heating effects, and is used to analyze the lifetime of large benchmark circuits. Further, a method for optimizing the circuit lifetime using minor layout modifications is proposed.