DocumentCode :
1787689
Title :
Sensorless estimation of global device-parameters based on Fmax testing
Author :
Shintani, Michihiro ; Sato, Takao
Author_Institution :
Dept. of Commun. & Comput. Eng., Kyoto Univ. Yoshida-honmachi, Kyoto, Japan
fYear :
2014
fDate :
2-6 Nov. 2014
Firstpage :
498
Lastpage :
503
Abstract :
Post-fabrication performance compensation and adaptive delay testing are indispensable means for improving yield and reliability of LSIs, The global parameter estimations, such as of threshold voltages, play a key role in maximizing their effectiveness. This paper proposes a novel technique that realizes an accurate device-parameter estimation through Fmax testing framework. In the proposed method, statistical path delay distributions of sensitized paths in Fmax testing are utilized to calculate device-parameters, such that they most likely explain the measurements in the Fmax testing. Two estimation procedures are proposed: one utilizes discrete Bayesian estimation and the other uses maximum likelihood estimation. Numerical experiments demonstrate that both methods achieve 2.5mV accuracy in estimating threshold voltages.
Keywords :
Bayes methods; integrated circuit testing; large scale integration; maximum likelihood estimation; statistical distributions; Fmax testing; discrete Bayesian estimation; global device-parameter; maximum likelihood estimation; sensorless estimation; statistical path delay distribution; threshold voltage estimation; voltage 2.5 mV; Delays; Estimation; Gaussian distribution; Semiconductor device measurement; Standards; Testing; Threshold voltage; Device-parameter estimation; Fmax testing; discrete Bayesian estimation; maximum likelihood estimation; statistical static timing analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2014 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
Type :
conf
DOI :
10.1109/ICCAD.2014.7001397
Filename :
7001397
Link To Document :
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