Title :
High resolution electron microscopy study of atomic structure and morphology of InSb films in AlAs matrix
Author :
Kolotovkina, Darya A. ; Gutakovskii, A.K.
Author_Institution :
A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The study of structural and morphological features has been carried out using high resolution electron microscopy (HREM). The subjects of inquiry have been grown by molecular beam epitaxy and have been prepared in cross section (110) and plan view (100). Islands have been found in solid solution InxAl1-xSbyAs1-y, which formed under different growth conditions. Concentration of In, Sb has been estimated in these islands. Possible ways of defects originating in the islands have been discussed.
Keywords :
III-V semiconductors; aluminium compounds; antimony compounds; atomic structure; indium compounds; molecular beam epitaxial growth; scanning electron microscopy; semiconductor thin films; solid solutions; transmission electron microscopy; HREM; atomic structure; defects; high-resolution electron microscopy; molecular beam epitaxial growth; morphology; solid solution; structural property; thin films; Crystals; Electron microscopy; Lattices; Molecular beam epitaxial growth; Physics; Solids; HREM; heterosystems; nanostructures;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882467
