Title :
The ion beam etching the materials for micro- and nanotechnologies
Author :
Topyakova, Marina V. ; Velichko, A.A.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
The analysis of the ion-beam etching rates of the materials used for manufacturing the integrated circuits is carried out. The etching rate-time functions and etching rate - ion beam current functions are presented. The results show that the current increasing involves significant increase of sputtering and redeposition effects. Based on results the most suitable ion beam etching parameters for subsequent correction of experimental integrated circuits are determined.
Keywords :
integrated circuit manufacture; nanoelectronics; sputter etching; etching rate-ion beam current functions; etching rate-time functions; integrated circuit manufacturing; ion-beam etching rates; microtechnology; nanotechnology; redeposition effects; sputtering effects; Etching; Integrated circuits; Ion beams; Materials; Nanoscale devices; Phosphors; Sputtering; focused ion beam etching; integrated circuits; scanning electron microscope;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882468
