• DocumentCode
    1787808
  • Title

    Study of gallium nitride surface treatment prior to PE CVD SiNx:H passivation

  • Author

    Parfenova, Maria A. ; Protasov, D.Yu. ; Malin, T.V. ; Nastoviak, Artem E. ; Devyatova, Svetlana F. ; Zhuravlev, K.S.

  • Author_Institution
    ISP, Novosibirsk, Russia
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    36
  • Lastpage
    38
  • Abstract
    The PE NH3 pretreatment followed by the wet chemical cleaning of GaN surface in an aqueous solution on the base of NH4OH, HCl and HF prior to PE CVD SiNx:H passivation allowed to improve electrophysical characteristics MIS-structures formed on GaN.
  • Keywords
    III-V semiconductors; MIS structures; gallium compounds; hydrogen; passivation; plasma CVD; silicon compounds; surface cleaning; wide band gap semiconductors; GaN; HCl; HF; MIS-structures; PE NH3 pretreatment; PECVD passivation; SiNx:H; aqueous solution; electrophysical characteristics; gallium nitride surface treatment; wet chemical cleaning; Gallium nitride; Passivation; Plasmas; Silicon compounds; Surface cleaning; gallium nitride; passivation; thin layers PE CVD SiNx:H;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
  • Conference_Location
    Novosibirsk
  • ISSN
    2325-4173
  • Print_ISBN
    978-1-4799-4669-3
  • Type

    conf

  • DOI
    10.1109/EDM.2014.6882471
  • Filename
    6882471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1787808