Title :
Two-dimensional modeling the process of thermal oxidation of non-planar silicon structures in CMOS-circuits´ isolation
Author :
Egorkin, Andrey V. ; Kalinin, S.V.
Author_Institution :
Join stock Co. “Novosibirsk Semicond. Device Plant & Design Bur.”, Novosibirsk, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
Two-dimensional model of the silicon thermal oxidation in the application SProcess of the program environment TCAD SenTaurus is developed. The most correct model, which quiet accurate describes different “delicate” effects of the thermal oxidation of nonplanar silicon surfaces, is described, identified and optimized. It is shown that to provide this appropriateness of the modeling process an influence of number nonlinear mechanical effects should be taken into account.
Keywords :
CMOS integrated circuits; circuit CAD; elemental semiconductors; integrated circuit modelling; oxidation; silicon; technology CAD (electronics); CMOS-circuit isolation; Si; TCAD SenTaurus program environment; application SProcess; nonplanar silicon structures; nonplanar silicon surfaces; number nonlinear mechanical effects; silicon thermal oxidation process; two-dimensional modeling; Equations; Mathematical model; Oxidation; Silicon; Strain; Stress; SProcess; TCAD SenTaurus; Thermal oxidation; silicon dioxide; two-dimensional modeling;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-4669-3
DOI :
10.1109/EDM.2014.6882478
