Current relaxation in PbSnTe:In in a strong magnetic field

Author

Akimov, Aleksey N. ; Epov, Vladimir S. ; Klimov, Alexander E. ; Neizvestny, Igor G. ; Shumsky, Vladimir N.

Author_Institution

Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

72

Lastpage

75

Abstract

Current change dynamics in the injection regime out of contacts and limitations by spatial charge at a fast (about 0.1 sec.) magnetic field turn on and off, strength to 4 T, were investigated in PbSnTe:In film-based structures at T=4.2 K. Peculiarities of current relaxation are discussed within the model that implies the presence of traps levels, distributed over energy, in the PbSnTe:In band gap.

Keywords

IV-VI semiconductors; energy gap; indium; lead compounds; semiconductor thin films; tin compounds; PbSnTe:In; PbSnTe:In film-based structures; band gap; current change dynamics; current relaxation; injection regime; magnetic field; magnetic flux density 4 T; spatial charge; trap levels; Lead; Lighting; Magnetic fields; Photoconductivity; Physics; Temperature measurement; Tin; PbSnTe:In; injection out of contacts; narrow-band semiconductor; photocurrent; relaxation; traps;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882480

Filename

6882480