Temperature-dependent photocurrent decay in PbSnTe:In films

Author

Akimov, Aleksey N. ; Epov, Vladimir S. ; Klimov, Alexander E. ; Shumsky, Vladimir N.

Author_Institution

Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

76

Lastpage

80

Abstract

The temperature-dependent photocurrent decay in PbSnTe:In films has been studied in the interval of temperatures T≈20-30 K at each implemented temperature having been stabilized accurate to ΔT≈0.01 K. The time constant of the process, whose value in the examined temperature interval proved to be ranging from ≈1.0 s to ≈200 s, was measured. The behavior displayed by the curve τ(T) is discussed on the assumption that, in the examined interval of temperatures, a ferroelectric transition occurs in PbSnTe:In.

Keywords

IV-VI semiconductors; ferroelectric thin films; ferroelectric transitions; indium; lead compounds; photoconductivity; semiconductor thin films; tin compounds; PbSnTe:In; PbSnTe:In films; ferroelectric transition; temperature-dependent photocurrent decay; temperatures interval; time constant; Electrical resistance measurement; Films; Photoconductivity; Resistance; Temperature dependence; Temperature distribution; Temperature measurement; PbSnTe:In; narrow gap semiconductor; photocurrent decay;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882481

Filename

6882481