DocumentCode
1787838
Title
FTIR research of protective PECVD coating for electro-optical devices
Author
Sidorov, Denis I. ; Mushinsky, Sergey S. ; Shevtsov, Denis I. ; Pervadchuk, Vladimir P.
Author_Institution
Perm Nat. Res. Polytech. Univ., Perm, Russia
fYear
2014
fDate
June 30 2014-July 4 2014
Firstpage
95
Lastpage
97
Abstract
The paper presents results of FTIR analysis of silicon organic thin films prepared by plasma enhanced chemical vapor deposition methods. The films were deposited from hexamethyldisilazane and oxygen mixture. Refractive index and deposition rates were obtained. Dependencies on plasma source power are presented. Possibility to prepare films with variable properties during deposition was demonstrated.
Keywords
Fourier transform spectra; infrared spectra; optical films; organic compounds; plasma CVD; plasma CVD coatings; protective coatings; refractive index; silicon compounds; thin films; FTIR; deposition rates; electro-optical devices; hexamethyldisilazane; oxygen mixture; plasma enhanced chemical vapor deposition; plasma source power; protective PECVD coating; refractive index; silicon organic thin films; Educational institutions; Films; Plasmas; Silicon; Spectroscopy; Substrates; FTIR; HMDSN; Mode spectroscopy; PECVD; Silicon organic thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on
Conference_Location
Novosibirsk
ISSN
2325-4173
Print_ISBN
978-1-4799-4669-3
Type
conf
DOI
10.1109/EDM.2014.6882485
Filename
6882485
Link To Document