Synthesis of conducting films In2O3:Sn with the method of magnetron sputtering and their electrophysical properties

Author

Troyan, P.E. ; Zhidik, Yury S. ; Sakharov, Yury V.

Author_Institution

Tomsk State Univ. of Control Syst. & Radio Electron., Tomsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

98

Lastpage

101

Abstract

This article presents research results of optical and electric properties of transparent ITO electroconductive films, their change at the variation of the drawing mode films with the method of magnetron sputtering. The technological mode that helps to receive ITO 100 nanometers thick films with superficial resistance of 10 Ω/□ and transmission coefficient of 87% is described.

Keywords

electrical conductivity; indium compounds; semiconductor thin films; sputter deposition; tin; ultraviolet spectra; visible spectra; ITO; conducting films; electric properties; electrophysical properties; magnetron sputtering; optical properties; size 100 nm; superficial resistance; thick films; transmission coefficient; transparent electroconductive films; Annealing; Atmosphere; Films; Indium tin oxide; Resistance; Sputtering; Substrates; Indic oxide doped by tin (ITO); high-temperature annealing; reactive magnetron dispersion;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2014 15th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-4669-3

Type

conf

DOI

10.1109/EDM.2014.6882486

Filename

6882486