DocumentCode
1790574
Title
Non-destructive threshold assessment of a pinned photo diode pixel with correlated double sampling
Author
Guidash, Michael ; Vogelsang, Thomas
Author_Institution
Rambus Inc., Sunnyvale, CA, USA
fYear
2014
fDate
22-25 June 2014
Firstpage
1
Lastpage
2
Abstract
This paper presents a pixel architecture and method of operation that enables a non-destructive assessment of the charge collected in a pinned photo diode pixel with transfer gate. The proposed architecture allows both true correlated double sampling for low noise at low light and per-pixel control of oversampling to increase the dynamic range of small pixels with limited full well capacity.
Keywords
CMOS image sensors; nondestructive testing; photodiodes; CMOS image sensor technology; correlated double sampling; nondestructive threshold assessment; pinned photodiode pixel; transfer gate; Dynamic range; Electric potential; Image sensors; Lighting; Logic gates; Noise; Sensors; correlated double sampling; digital imaging; high dynamic range; image sensor; oversampling;
fLanguage
English
Publisher
ieee
Conference_Titel
Consumer Electronics (ISCE 2014), The 18th IEEE International Symposium on
Conference_Location
JeJu Island
Type
conf
DOI
10.1109/ISCE.2014.6884513
Filename
6884513
Link To Document