DocumentCode
1790578
Title
CMOS binary image sensor using gate/body-tied MOSFET-Type photodetector
Author
Byoung-Soo Choi ; Sung-Hyun Jo ; Myunghan Bae ; Pyung Choi ; Jang-Kyoo Shin ; Jeongyeob Kim
Author_Institution
Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea
fYear
2014
fDate
22-25 June 2014
Firstpage
1
Lastpage
2
Abstract
This paper presents a complementary metal oxide semiconductor (CMOS) binary image sensor using gate/body-tied (GBT) MOSFET-Type photodetector. The GBT photodetector is composed of a floating gate which is tied to the body (n-well) of PMOSFET. The GBT photodetector has a high responsivity and it is possible to reduce the pixel size. Although the binary image sensor has a low degree of difference between dark and light, the binary image sensor using GBT photodetector has a high responsivity, high speed and low power.
Keywords
CMOS image sensors; MOSFET; photodetectors; CMOS binary image sensor; GBT photodetector; PMOSFET; complementary metal oxide semiconductor; gate/body-tied MOSFET-type photodetector; Decision support systems; CMOS image sensor; binary image; gate/body-tied photo detector; high speed;
fLanguage
English
Publisher
ieee
Conference_Titel
Consumer Electronics (ISCE 2014), The 18th IEEE International Symposium on
Conference_Location
JeJu Island
Type
conf
DOI
10.1109/ISCE.2014.6884516
Filename
6884516
Link To Document