DocumentCode
1791136
Title
Room Temperature Single Electron Transistor Model Optimization Based on Ordered Mesoporous Membrane
Author
An Li-Feng
Author_Institution
Hebei Univ. of Sci. & Technol., Shijiazhuang, China
fYear
2014
fDate
25-26 Oct. 2014
Firstpage
620
Lastpage
623
Abstract
Based on the actual characteristic of ordered mesoporous membrane temperature single electron transistor, from two aspects of modeling of the very small size coulomb island single electron transistor and multi-island single electron transistor, the optimization of the existing single electron transistor semi-classical model is worked out, which lays a theoretical foundation for the design and simulation of room temperature single electron transistor.
Keywords
mesoporous materials; single electron transistors; multi-island transistor; ordered mesoporous membrane; room temperature single electron transistor model optimization; semiclassical model; temperature 293 K to 298 K; very small size coulomb island transistor; Integrated circuit modeling; Logic gates; Mesoporous materials; Optimization; Single electron transistors; Solid modeling; Tunneling; ordered mesoporous membrane; room temperature; single electron transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Computation Technology and Automation (ICICTA), 2014 7th International Conference on
Conference_Location
Changsha
Print_ISBN
978-1-4799-6635-6
Type
conf
DOI
10.1109/ICICTA.2014.154
Filename
7003617
Link To Document