Title :
A Total Ionizing Dose Dataset for Vertical NPN Transistors
Author :
Adams, Dennis A. ; Barnes, Herbert A. ; Goldstein, Norman P. ; Harms, David C. ; Horner, Jereimah J. ; Sherman, Cory E. ; Stodart, Craig
Author_Institution :
Northrop Grumman Corp., Baltimore, MD, USA
Abstract :
A Total Ionizing Dose (TID) study was performed on vertical NPN bipolar transistors used in two radiation hardened 10V and 40V BiCMOS processing technologies. The data shows increased total dose degradation with decreasing base doping concentration. Testing was performed at both high [90 rad(Si)/sec] and low [0.1 rad(Si)/sec] dose rates with minimal differences noted at the lower dose rate. The primary finding from this study was that, with proper device modeling and selection of device operating currents, these devices are suitable for 300 krad(Si) mixed signal applications.
Keywords :
BiCMOS integrated circuits; bipolar transistors; radiation hardening (electronics); semiconductor device models; semiconductor device testing; BiCMOS processing technology; TID; base doping concentration; device modeling; device operating currents; mixed signal applications; radiation hardened processing technology; total dose degradation; total ionizing dose dataset; vertical NPN bipolar transistors; voltage 10 V; voltage 40 V; Annealing; BiCMOS integrated circuits; Bipolar transistors; Degradation; Radiation effects; Transistors;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004510
