Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm

Author

Autran, Jean-Luc ; Munteanu, Daniela ; Sauze, S. ; Gasiot, Gilles ; Roche, Philippe

Author_Institution

IM2NP Lab., Aix-Marseille Univ., Marseille, France

fYear

2014

fDate

14-18 July 2014

Firstpage

1

Lastpage

8

Abstract

Real-time (life) testing of the soft-error rate (SER) is an experimental reliability technique to determine the soft error sensitivity of a given component, circuit or system from the monitoring of a population of devices subjected to natural radiation and operating under nominal conditions. We present here a survey of real-time testing results accumulated from 2006 at mountain altitude on the Altitude SEE Test European Platform (ASTEP) and underground at the Underground Laboratory of Modane (LSM). Radiation data concern three generations of SRAMs manufactured in CMOS 130, 65 and 40 nm technologies.

Keywords

CMOS memory circuits; SRAM chips; integrated circuit reliability; integrated circuit testing; life testing; radiation hardening (electronics); ASTEP; CMOS manufacturing; LSM; SRAM; altitude SEE test European platform; complementary metal oxide semiconductor; mountain altitude; radiation data; real-time SER testing; reliability technique; size 130 nm; size 40 nm; size 65 nm; soft error sensitivity; soft-error rate; static random access memory; underground laboratory of Modane; Atmospheric measurements; CMOS integrated circuits; Laboratories; Neutrons; Random access memory; Real-time systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2014 IEEE

Conference_Location

Paris

Print_ISBN

978-1-4799-5883-2

Type

conf

DOI

10.1109/REDW.2014.7004512

Filename

7004512