Effect of AlOx inserting layer on Cu/VOx/TiN RRAM devices performance

Author

Xiwen Hu ; Wenke Cheng ; Yuchen Wang ; Xue Guan ; Kuo Sun ; Fang Wang ; Baolin Wang ; Yinping Miao ; Kailiang Zhang

Author_Institution

Sch. of Electron. Inf. Eng., Univ. of Technol., Tianjin, China

fYear

2014

fDate

3-6 Aug. 2014

Firstpage

358

Lastpage

362

Abstract

In this paper, a low power resistive switching memory (RRAM) device with Cu/VO_x/AlO_x/TiN stack structure is demonstrated. We studied the impact of different thicknesses of AlO_x film on the Cu/VO_x/AlO_x/TiN RRAM device. With the increasing of AlO_x thickness, the resistance of pristine state gets higher. Higher resistance of high resistive states (R_HRS) (up to 10⁹Ω), lower reset current of 40μA and lower operation voltage could be obtained after inserting AlO_x film. Compared with the Cu/VO_x/TiN structure, the Cu/VO_x/AlO_x/TiN stack structure showed better electrical properties. Therefore, this kind of method to insert AlO_x between resistive layer and electrode would have a broader application prospect in the field of RRAM.

Keywords

aluminium compounds; copper; electrical resistivity; low-power electronics; random-access storage; titanium compounds; vanadium compounds; AlO_x film thickness; Cu-VO_x-AlO_x-TiN; RRAM; current 40 muA; electrode; high resistive states; low power resistive switching memory device; lower operation voltage; lower reset current; pristine state resistance; resistive layer; Educational institutions; Electrodes; Films; Power demand; Resistance; Switches; Tin; AlOx; RRAM; low power consumption; stack structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechatronics and Automation (ICMA), 2014 IEEE International Conference on

Conference_Location

Tianjin

Print_ISBN

978-1-4799-3978-7

Type

conf

DOI

10.1109/ICMA.2014.6885723

Filename

6885723