Title :
Charged Particle Induced Degradation of Trench Type n-Channel Power MOSFETs
Author :
Koga, R. ; Bielat, S. ; George, Jinto
Author_Institution :
Aerosp. Corp., El Segundo, CA, USA
Abstract :
Radiation sensitivity to protons and heavy ions is observed with trench type n-channel power MOSFETs. Degradations due to SEGR/SEB as well as particle induced microdose effects are presented with comparisons to Co60 gamma-ray TID effects.
Keywords :
gamma-rays; power MOSFET; protons; sensitivity analysis; SEB; SEGR; charged particle induced degradation; gamma-ray TID effects; heavy ions; microdose effects; protons; radiation sensitivity; trench type n-channel power MOSFET; Degradation; Gamma-rays; Ions; MOSFET; Protons; Radiation effects; Sensitivity;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004556
