Title :
Displacement Damage Testing Results for Intersil Bipolar and BiCMOS Analog Parts
Author :
van Vonno, N.W. ; Shick, J.E. ; Traynham, P.W. ; Ballou, F.C. ; Gill, J.S.
Author_Institution :
Precision Products, Intersil Corp., Palm Bay, FL, USA
Abstract :
We summarize the results of 1MeV neutron displacement damage (DD) testing of several Intersil bipolar and BiCMOS analog and power management functions, including voltage references, comparators and point of load regulators.
Keywords :
BiCMOS analogue integrated circuits; comparators (circuits); integrated circuit testing; reference circuits; BiCMOS analog functions; DD testing; Intersil bipolar functions; comparators; electron volt energy 1 MeV; load regulators; neutron displacement damage testing; power management functions; voltage references; BiCMOS integrated circuits; Field effect transistors; Neutrons; Propagation delay; Radiation effects; Resistance; Testing;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location :
Paris
Print_ISBN :
978-1-4799-5883-2
DOI :
10.1109/REDW.2014.7004564
