Enhanced Low Dose Rate Sensitivity Analysis

Author

Nunez, David ; Poizat, Marc ; Jimenez, Joaquin ; Munoz, Eugenio ; Dominguez, Manuel

Author_Institution

Alter Technol. TUV Nord S.A.U., Sevilla, Spain

fYear

2014

fDate

14-18 July 2014

Firstpage

1

Lastpage

6

Abstract

During a series of experiments, different components manufactured on bipolar technology have been irradiated at two different dose rates (36 rd(Si)/h and 360rd(Si)/h) and on two biasing conditions (ON/OFF). With the aim of identifying different factors of degradation, a set of different functions included on almost every space system has been considered. Different manufacturers and technologies have also been selected to ensure the widest possible set of data. The results obtained are not showing a significant dose rate dependency on some items although it has been detected that for several bipolar part types the worst test conditions is systematically considered under 36rd(Si)/h dose rate.

Keywords

radiation effects; semiconductor device testing; sensitivity analysis; biasing condition; bipolar technology; degradation factor; dose rate; irradiation; sensitivity analysis; space system; test condition; Degradation; Electronic components; Europe; Postal services; Radiation effects; Sensitivity analysis; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2014 IEEE

Conference_Location

Paris

Print_ISBN

978-1-4799-5883-2

Type

conf

DOI

10.1109/REDW.2014.7004568

Filename

7004568