• DocumentCode
    1791937
  • Title

    Investigation of the Cosine Law for Lateral Power MOSFETs

  • Author

    Scheick, Leif Z. ; Edmonds, Larry

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2014
  • fDate
    14-18 July 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The results of recent Single Event Effect (SEE) testing of newly available power MOSFETs are presented.
  • Keywords
    power MOSFET; radiation hardening (electronics); semiconductor device testing; SEE testing; cosine law; lateral power MOSFETs; single event effect; Conferences; Ions; Logic gates; MOSFET; Radiation effects; Testing; Xenon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2014 IEEE
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-5883-2
  • Type

    conf

  • DOI
    10.1109/REDW.2014.7004575
  • Filename
    7004575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1791937