Neutron Induced Single Event Upset (SEU) Testing of Static Random Access Memory (SRAM) Devices

Author

Tostanoski, Michael J. ; Deaton, Terrence F. ; Strayer, Roy E. ; Goldflam, Rudolf ; Fullem, Travis Z.

Author_Institution

Aeroflex RAD, Inc., Colorado Springs, CO, USA

fYear

2014

fDate

14-18 July 2014

Firstpage

1

Lastpage

8

Abstract

Results of neutron induced single event upset (SEU) testing of two Synchronous Burst Static Random Access Memory (SRAM) devices, the Galvantech GVT71128G36 128K x 36 and the GSI GS816273CC 256K x 72, and the internal RAM (iRAM) in the Texas Instruments SM32C6713BGDPA20EP Digital Signal Processor (DSP) are described. Four samples of each device type were irradiated with a 14-MeV neutron source, with and without a polyethylene moderator. The units were irradiated using a continual read/write correct loop using several bit patterns. All units-under-test were operated during irradiation using the respective operating datasheet supply potential. It is noted that one of these devices exhibited a large low energy (<; 1MeV) neutron cross section.

Keywords

SRAM chips; digital signal processing chips; integrated circuit testing; neutron sources; radiation effects; radiation hardening (electronics); DSP; GSI GS816273CC; Galvantech; SEU testing; SM32C6713BGDPA20EP; Texas Instruments; bit pattern; datasheet; digital signal processor; iRAM; internal RAM; irradiation; neutron cross section; neutron induced single event upset; neutron source; polyethylene moderator; read/write correct loop; static random access memory; synchronous burst SRAM device; units-under-test; Neutrons; Niobium; Polyethylene; Radiation effects; Random access memory; Testing; Uncertainty;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2014 IEEE

Conference_Location

Paris

Print_ISBN

978-1-4799-5883-2

Type

conf

DOI

10.1109/REDW.2014.7004579

Filename

7004579