• DocumentCode
    1791974
  • Title

    Single Event Effects in Power MOSFETs and IGBTs Due to 14 MeV and 25 meV Neutrons

  • Author

    Lambert, Damien ; Desnoyers, Francois ; Thouvenot, Didier ; Azais, Bruno

  • Author_Institution
    Nucletudes, Les Ulis, France
  • fYear
    2014
  • fDate
    14-18 July 2014
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Single Event Effect (SEE) characterizations under 14 MeV and 25 meV neutrons are presented for various commercial power electronic components: power metal-oxide-semiconductor field effect transistors (MOSFET) and insulated gate bipolar transistors (IGBT).
  • Keywords
    insulated gate bipolar transistors; power MOSFET; radiation hardening (electronics); IGBT; SEE characterizations; commercial power electronic components; electron volt energy 14 MeV; electron volt energy 25 meV; insulated gate bipolar transistors; power MOSFET; power metal-oxide-semiconductor field effect transistors; single event effects; Aerospace electronics; Guidelines; Insulated gate bipolar transistors; MOSFET; Neutrons; Safety; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2014 IEEE
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-5883-2
  • Type

    conf

  • DOI
    10.1109/REDW.2014.7004592
  • Filename
    7004592
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1791974