DocumentCode
1791977
Title
Single-Event and Radiation Effect on Enhancement Mode Gallium Nitride FETs
Author
Lidow, A. ; Nakata, A. ; Rearwin, M. ; Strydom, J. ; Zafrani, A.M.
Author_Institution
Efficient Power Conversion Corp., El Segundo, CA, USA
fYear
2014
fDate
14-18 July 2014
Firstpage
1
Lastpage
7
Abstract
This paper presents responses of the latest MiGaN FETs to space radiation conditions. The new MiGaN has shown radiation tolerance to 1Mrad TID and SEGR and SEB immunity at LET of 85Mev/(mg/cm2) as well as immunity to displacement damage and Low dose (ELDRs) testing.
Keywords
III-V semiconductors; field effect transistors; gallium compounds; radiation hardening (electronics); wide band gap semiconductors; ELDR immunity; GaN; LET; displacement damage immunity; enhancement mode FET; low dose testing immunity; radiation effect; single-event effect; space radiation conditions; Field effect transistors; Gallium nitride; Logic gates; Neutrons; Power conversion; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location
Paris
Print_ISBN
978-1-4799-5883-2
Type
conf
DOI
10.1109/REDW.2014.7004594
Filename
7004594
Link To Document