DocumentCode
1791980
Title
Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy Ion Irradiation
Author
Lee, David S. ; Wirthlin, Michael ; Swift, Gary ; Le, Anthony C.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
fYear
2014
fDate
14-18 July 2014
Firstpage
1
Lastpage
5
Abstract
This study examines the single-event response of the Xilinx 28 nm Kintex-7 FPGA irradiated with heavy ions. Results for single-event effects on configuration SRAM cells, user-accessible Flip-Flop cells, and BlockRAM™ memory are provided. This study also describes an unconventional single event latch-up signature observed during testing.
Keywords
SRAM chips; field programmable gate arrays; flip-flops; radiation hardening (electronics); BlockRAM memory; Xilinx Kintex-7 FPGA; Xilinx Kintex-7 field-programmable gate array; configuration SRAM cells; heavy ion irradiation; single-event effect characterization; single-event response; singleevent latch-up signature; size 28 nm; user-accessible flip-flop cells; Field programmable gate arrays; Flip-flops; Monitoring; Rails; Single event upsets; Temperature measurement; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location
Paris
Print_ISBN
978-1-4799-5883-2
Type
conf
DOI
10.1109/REDW.2014.7004595
Filename
7004595
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