Terrestrial Neutron Induced Failure in Silicon Carbide Power MOSFETs

Author

Rashed, Kazi ; Wilkins, Richard ; Akturk, A. ; Dwivedi, R.C. ; Gersey, B.B.

Author_Institution

Dept. of Electr. & Comput. Eng., Prairie View A&M Univ., Prairie View, TX, USA

fYear

2014

fDate

14-18 July 2014

Firstpage

1

Lastpage

4

Abstract

The first observation of neutron induced single event catastrophic failures in silicon carbide (SiC) power MOSFETs, specifically 1200V 24A Cree CMF10120D SiC power MOSFETs, is presented. The stress voltage at which these failures were observed is VDS>800V. At the highest rated drain bias of 1200V (and VGS=0V), we expect that this discrete power MOSFET will not suffer a catastrophic failure in more than 200 years at sea level due to terrestrial neutrons. The knowledge of this failure probability is important for the integration of the nascent silicon carbide high power MOSFETs into next generation high efficiency power systems.

Keywords

failure analysis; neutrons; power MOSFET; probability; semiconductor device reliability; silicon compounds; wide band gap semiconductors; Cree CMF10120D; SiC; current 24 A; drain bias; failure probability; metal-oxide-semiconductor field-effect transistor; silicon carbide power MOSFET; single event catastrophic failure; stress voltage; terrestrial neutron induced failure; voltage 1200 V; Aerospace electronics; MOSFET; Neutrons; Radiation effects; Sea level; Silicon carbide; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2014 IEEE

Conference_Location

Paris

Print_ISBN

978-1-4799-5883-2

Type

conf

DOI

10.1109/REDW.2014.7004598

Filename

7004598