DocumentCode
1791992
Title
TID and SEE Characterization of Rad-Hardened 1.2GHz PLL IP from New ST CMOS 65nm Space Technology
Author
Malou, Florence ; Gasiot, Gilles ; Chevallier, Remy ; Dugoujon, Laurent ; Roche, Philippe
Author_Institution
Environ. & New Components, Centre Nat. d´Etudes Spatiales (CNES), Toulouse, France
fYear
2014
fDate
14-18 July 2014
Firstpage
1
Lastpage
8
Abstract
We present Single Event Effects characterization and Total Ionizing Dose behavior up to 300 krad(Si) on Rad-Hardened 1.2GHz PLL IP and cold-spare I/O from new ST CMOS 65nm space technology.
Keywords
CMOS analogue integrated circuits; UHF integrated circuits; industrial property; phase locked loops; radiation hardening (electronics); SEE characterization; ST CMOS space technology; TID characterization; cold-spare I-O; frequency 1.2 GHz; intellectual property; phase-locked loop; rad-hardened PLL IP; CMOS integrated circuits; CMOS technology; Clocks; Phase locked loops; Protons; Standards; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location
Paris
Print_ISBN
978-1-4799-5883-2
Type
conf
DOI
10.1109/REDW.2014.7004601
Filename
7004601
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