• DocumentCode
    1792002
  • Title

    Total Ionizing Dose Characterization of 65 nm Flash-Based FPGA

  • Author

    Rezzak, Nadia ; Jih-Jong Wang ; Chang-Kai Huang ; Nguyen, Victor ; Bakker, Gregory

  • Author_Institution
    Microsemi SOC, San Jose, CA, USA
  • fYear
    2014
  • fDate
    14-18 July 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    New 65 nm flash-based field programmable gate array with system-on-chip capability is introduced. We present recent Total Ionizing Dose tests results on Smart Fusion 2 Flash-based FPGAs. TID effects at the device and product level are presented and discussed.
  • Keywords
    field programmable gate arrays; flash memories; system-on-chip; SoC; device level; field programmable gate array; product level; size 65 nm; smart fusion 2 flash-based FPGA; system-on-chip capability; total ionizing dose characterization; Degradation; Field programmable gate arrays; Logic gates; MOS devices; Nonvolatile memory; Radiation effects; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2014 IEEE
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-5883-2
  • Type

    conf

  • DOI
    10.1109/REDW.2014.7004606
  • Filename
    7004606