DocumentCode
1792002
Title
Total Ionizing Dose Characterization of 65 nm Flash-Based FPGA
Author
Rezzak, Nadia ; Jih-Jong Wang ; Chang-Kai Huang ; Nguyen, Victor ; Bakker, Gregory
Author_Institution
Microsemi SOC, San Jose, CA, USA
fYear
2014
fDate
14-18 July 2014
Firstpage
1
Lastpage
5
Abstract
New 65 nm flash-based field programmable gate array with system-on-chip capability is introduced. We present recent Total Ionizing Dose tests results on Smart Fusion 2 Flash-based FPGAs. TID effects at the device and product level are presented and discussed.
Keywords
field programmable gate arrays; flash memories; system-on-chip; SoC; device level; field programmable gate array; product level; size 65 nm; smart fusion 2 flash-based FPGA; system-on-chip capability; total ionizing dose characterization; Degradation; Field programmable gate arrays; Logic gates; MOS devices; Nonvolatile memory; Radiation effects; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop (REDW), 2014 IEEE
Conference_Location
Paris
Print_ISBN
978-1-4799-5883-2
Type
conf
DOI
10.1109/REDW.2014.7004606
Filename
7004606
Link To Document