Cross talk measurements of a time-gated 4×128 SPAD array for pulsed Raman spectroscopy

Author

Nissinen, I. ; Nissinen, J. ; Holma, J. ; Kostamovaara, J.

Author_Institution

Dept. of Electr. Eng., Univ. of Oulu, Oulu, Finland

fYear

2014

fDate

27-28 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

A time-gated 4×128 Single Photon Avalanche Diode (SPAD) line array with a 512-channel Time-to-digital converter (TDC) has been designed and fabricated in a 0.35 μm high voltage CMOS technology for pulsed Raman spectroscopy. In Raman spectroscopy the SPAD array can be designed as a line array with a high fill factor because electronics can be designed on either side of the SPAD array. In this paper cross talk measurements of the array have been carried out to investigate the probability of the cross talk between adjacent SPADs in an array with high density. Measurements showed a cross talk probability of 0.11% with a pitch of adjacent SPADs of 32 μm. In addition, the largest probability of the cross talk was measured to occur with a short delay.

Keywords

CMOS integrated circuits; Raman spectroscopy; avalanche diodes; optical crosstalk; semiconductor device models; SPAD array; cross talk measurements; electronics; high voltage CMOS technology; pulsed Raman spectroscopy; single photon avalanche diode line array; size 0.35 mum; size 32 mum; time-to-digital converter; Arrays; CMOS integrated circuits; Delay lines; Detectors; Fluorescence; Photonics; Raman scattering; Geiger mode; single photon detection;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2014

Conference_Location

Tampere

Type

conf

DOI

10.1109/NORCHIP.2014.7004711

Filename

7004711