DocumentCode
1792089
Title
High-voltage pulse-triggered SR latch level-shifter design considerations
Author
Larsen, Dennis Oland ; Llimos Muntal, Pere ; Jorgensen, Ivan H. H. ; Bruun, Erik
Author_Institution
Dept. of Electr. Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2014
fDate
27-28 Oct. 2014
Firstpage
1
Lastpage
6
Abstract
This paper compares pulse-triggered level shifters with a traditional level-triggered topology for high-voltage applications with supply voltages in the 50 V to 100 V range. It is found that the pulse-triggered SR (Set/Reset) latch level-shifter has a superior power consumption of 1800 μW/MHz translating a signal from 0-3.3 V to 87.5-100 V. The operation of this level-shifter is verified with measurements on a fabricated chip. The shortcomings of the implemented level-shifter in terms of power dissipation, transition delay, area, and startup behavior are then considered and an improved circuit is suggested which has been designed in three variants being able to translate the low-voltage 0-3.3 V signal to 45-50 V, 85-90 V, and 95-100 V respectively. The improved 95-100 V level shifter achieves a considerably lower power consumption of 438 μW/MHz along with a significantly lower transition delay. The 45-50 V version achieves 47.5 μW/MHz and a transition delay of only 2.03 ns resulting in an impressive FOM of 2.03ns/(0.35 μm 50 V) = 0.12ns/μmV.
Keywords
cooling; flip-flops; low-power electronics; microprocessor chips; power integrated circuits; fabricated chip; high-voltage pulse-triggered SR latch; level-shifter design; level-triggered topology; power consumption; power dissipation; pulse-triggered level shifters; set-reset latch; startup behavior; transition delay; voltage 0 V to 3.3 V; voltage 45 V to 50 V; voltage 50 V to 100 V; Delays; Latches; Logic gates; Mirrors; Power demand; Topology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
NORCHIP, 2014
Conference_Location
Tampere
Type
conf
DOI
10.1109/NORCHIP.2014.7004737
Filename
7004737
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