Title :
Compact models and model standard for 2.5D and 3D integration
Author :
Qiaosha Zou ; Yuan Xie
Author_Institution :
Comput. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
3D integration is an emerging interconnect technology that can enable the continuation of performance scaling and the reduction of form factors. There are various approaches for 3D integration, including system-in-package (SiP), TSV-based 3D ICs, monolithic 3D ICs, and inductance/capacitance coupling 3D ICs, among which TSV-based 3D IC is the most promising one. This paper provides a summary of previous work on electrical modelings for 3D IC, with an emphasis on two key interconnect approaches: TSVs and RDLs. Based on prior work, we describe a compact model standard to facilitate a generic modeling approach for future 3D ICs.
Keywords :
integrated circuit interconnections; integrated circuit modelling; system-in-package; three-dimensional integrated circuits; 2.5D integration; 3D integration; RDL; SiP; TSV based 3D IC; compact model standard; electrical modeling; integrated circuit models; interconnect technology; monolithic 3D IC; redistribution layer; system-in-package; Capacitance; Integrated circuit modeling; Mathematical model; Resistance; Silicon; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
System Level Interconnect Prediction (SLIP), 2014 ACM/IEEE International Workshop on
Conference_Location :
San Francisco, CA
DOI :
10.1145/2633948.2633955